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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V - SPA07N60C3

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V - SPA07N60C3
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.82$ 2.82$
5 - 9 2.67$ 2.67$
10 - 24 2.53$ 2.53$
25 - 49 2.39$ 2.39$
50 - 99 2.34$ 2.34$
100 - 160 2.10$ 2.10$
Quantity U.P
1 - 4 2.82$ 2.82$
5 - 9 2.67$ 2.67$
10 - 24 2.53$ 2.53$
25 - 49 2.39$ 2.39$
50 - 99 2.34$ 2.34$
100 - 160 2.10$ 2.10$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 160
Set of 1

N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V - SPA07N60C3. N-channel transistor, 4.6A, 7.3A, 100uA, 0.54 Ohms, TO-220FP, TO-220FP, 650V. ID (T=100°C): 4.6A. ID (T=25°C): 7.3A. Idss (max): 100uA. On-resistance Rds On: 0.54 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 650V. C(in): 790pF. Cost): 260pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 21.9A. IDss (min): 0.5uA. Marking on the case: 07N60C3. Pd (Power Dissipation, Max): 32W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 60 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. Note: Fully isolated package (2500VAC /1 minute). G-S Protection: no. Quantity in stock updated on 16/04/2025, 06:25.

Technical documentation

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SPA11N80C3

SPA11N80C3

N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A...
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
SPA11N80C3
N-channel transistor, 7.1A, 11A, 200uA, 0.39 Ohms, TO-220FP, TO-220FP-3-1, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 200uA. On-resistance Rds On: 0.39 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP-3-1. Voltage Vds(max): 800V. C(in): 1600pF. Cost): 800pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low effective capacitance'. Id(imp): 33A. IDss (min): 0.5uA. Marking on the case: 11N80C3. Pd (Power Dissipation, Max): 41W. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: Fully isolated package (2500VAC /1 minute). Drain-source protection : yes. G-S Protection: no
Set of 1
4.58$ VAT incl.
(4.58$ excl. VAT)
4.58$

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