Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.56$ | 1.56$ |
5 - 9 | 1.49$ | 1.49$ |
10 - 24 | 1.41$ | 1.41$ |
25 - 49 | 1.33$ | 1.33$ |
50 - 99 | 1.30$ | 1.30$ |
100 - 221 | 1.17$ | 1.17$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.56$ | 1.56$ |
5 - 9 | 1.49$ | 1.49$ |
10 - 24 | 1.41$ | 1.41$ |
25 - 49 | 1.33$ | 1.33$ |
50 - 99 | 1.30$ | 1.30$ |
100 - 221 | 1.17$ | 1.17$ |
BYV28-200. Cj: 190pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 30 ns. Semiconductor material: silicon. Function: 'Avalanche Sinterglass Diode Fast'. Production date: 201412. Forward current (AV): 3.5A. IFSM: 90A. MRI (max): 100uA. MRI (min): 1uA. Marking on the case: BYV28-200. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-64 ( Glass ). Housing (according to data sheet): SOD-64 Glass. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.89V. VRRM: 200V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 2500. Spec info: Ifsm--90A, t=10mS. Quantity in stock updated on 25/12/2024, 05:25.
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