Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.53$ | 1.53$ |
5 - 9 | 1.45$ | 1.45$ |
10 - 24 | 1.38$ | 1.38$ |
25 - 42 | 1.30$ | 1.30$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.53$ | 1.53$ |
5 - 9 | 1.45$ | 1.45$ |
10 - 24 | 1.38$ | 1.38$ |
25 - 42 | 1.30$ | 1.30$ |
BYV29-500. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 9A. IFSM: 100A. MRI (max): 50uA. MRI (min): 2uA. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC ( SOD59 ). Threshold voltage Vf (max): 1.4V. Forward voltage Vf (min): 0.9V. VRRM: 500V. Number of terminals: 2. Quantity per case: 1. Spec info: Ifsm 110Ap t=8.3ms. Quantity in stock updated on 25/12/2024, 16:25.
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