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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V - SI4401DY

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V - SI4401DY
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.39$ 3.39$
Quantity U.P
1 - 4 3.39$ 3.39$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4
Set of 1

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V - SI4401DY. P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 45ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.013 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 55 ns. Td(on): 18 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 15/04/2025, 21:25.

Technical documentation

Equivalent products :

Quantity in stock : 82
SI4401BDY

SI4401BDY

P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. ...
SI4401BDY
P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
SI4401BDY
P-channel transistor, 8.7A, 10uA, SO, SO-8, 40V. ID (T=25°C): 8.7A. Idss (max): 10uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 40V. Channel type: P. Trr Diode (Min.): 35ms. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.9A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.011 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 97 ns. Td(on): 16 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.07$ VAT incl.
(2.07$ excl. VAT)
2.07$

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