MMBT4401LT1G

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 4	0.69$	0.69$
5 - 9	0.66$	0.66$
10 - 24	0.62$	0.62$
25 - 49	0.59$	0.59$
50 - 99	0.55$	0.55$
100 - 118	0.52$	0.52$

Quantity (Set of 10)	U.P
1 - 4	0.69$	0.69$
5 - 9	0.66$	0.66$
10 - 24	0.62$	0.62$
25 - 49	0.59$	0.59$
50 - 99	0.55$	0.55$
100 - 118	0.52$	0.52$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1171

Set of 10

MMBT4401LT1G. Cost): 80pF. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 20. Collector current: 0.6A. Ic(pulse): 0.9A. Marking on the case: 2x. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Vebo: 6V. Spec info: screen printing/CMS code 2X. BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 19:25.

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Delivery in 2-3 days, with postal tracking!