Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.52$ | 1.52$ |
5 - 9 | 1.45$ | 1.45$ |
10 - 24 | 1.37$ | 1.37$ |
25 - 49 | 1.30$ | 1.30$ |
50 - 99 | 1.26$ | 1.26$ |
100 - 108 | 1.14$ | 1.14$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.52$ | 1.52$ |
5 - 9 | 1.45$ | 1.45$ |
10 - 24 | 1.37$ | 1.37$ |
25 - 49 | 1.30$ | 1.30$ |
50 - 99 | 1.26$ | 1.26$ |
100 - 108 | 1.14$ | 1.14$ |
P-channel transistor, 6.5A, 500uA, TO-220, TO-220AB, 200V - IRF9630. P-channel transistor, 6.5A, 500uA, TO-220, TO-220AB, 200V. ID (T=25°C): 6.5A. Idss (max): 500uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 700pF. Cost): 200pF. Channel type: P. Conditioning: plastic tube. Trr Diode (Min.): 200 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 26A. ID (T=100°C): 4A. IDss (min): 100uA. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 0.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 28 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/04/2025, 21:25.
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