IRF5210S

IRF5210S. C(in): 2860pF. Cost): 800pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. ID (T=100°C): 24A. ID (T=25°C): 38A. Idss (max): 250uA. IDss (min): 50uA. Marking on the case: F5210S. Pd (Power Dissipation, Max): 3.8W. Assembly/installation: surface-mounted component (SMD). Td(off): 72 ns. Td(on): 14 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 12/01/2025, 10:25.