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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V - 2SD2499

NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V - 2SD2499
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Quantity excl. VAT VAT incl.
1 - 4 3.45$ 3.45$
5 - 9 3.27$ 3.27$
10 - 24 3.17$ 3.17$
25 - 49 3.10$ 3.10$
50 - 99 3.03$ 3.03$
100 - 249 2.93$ 2.93$
250+ 2.83$ 2.83$
Quantity U.P
1 - 4 3.45$ 3.45$
5 - 9 3.27$ 3.27$
10 - 24 3.17$ 3.17$
25 - 49 3.10$ 3.10$
50 - 99 3.03$ 3.03$
100 - 249 2.93$ 2.93$
250+ 2.83$ 2.83$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V - 2SD2499. NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 40 Ohms. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V. Original product from manufacturer Toshiba. Quantity in stock updated on 04/06/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 54
2SD2499-PMC

2SD2499-PMC

NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF ...
2SD2499-PMC
NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 40 Ohms. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: Rbe 40 Ohms. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V
2SD2499-PMC
NPN transistor, 6A, TO-3PF (SOT399, 2-16E3A), 2-16E3A, 600V. Collector current: 6A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): 2-16E3A. Collector/emitter voltage Vceo: 600V. BE diode: no. BE resistor: 40 Ohms. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: Rbe 40 Ohms. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 5V
Set of 1
3.18$ VAT incl.
(3.18$ excl. VAT)
3.18$

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