Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.45$ | 3.45$ |
5 - 9 | 3.27$ | 3.27$ |
10 - 24 | 3.10$ | 3.10$ |
25 - 49 | 2.93$ | 2.93$ |
50 - 99 | 2.86$ | 2.86$ |
100 - 249 | 2.79$ | 2.79$ |
250+ | 2.69$ | 2.69$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.45$ | 3.45$ |
5 - 9 | 3.27$ | 3.27$ |
10 - 24 | 3.10$ | 3.10$ |
25 - 49 | 2.93$ | 2.93$ |
50 - 99 | 2.86$ | 2.86$ |
100 - 249 | 2.79$ | 2.79$ |
250+ | 2.69$ | 2.69$ |
2SD2499. BE resistor: 40 Ohms. Cost): 95pF. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: CTV-HA. Max hFE gain: 25. Minimum hFE gain: 5. Collector current: 6A. Ic(pulse): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused MESA Type'. Tf(max): 0.6us. Tf(min): 0.3us. Housing (according to data sheet): 2-16E3A. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 600V. Vebo: 5V. Housing: TO-3PF (SOT399, 2-16E3A). BE diode: no. CE diode: yes. Quantity in stock updated on 24/12/2024, 13:25.
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