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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 8A, 700V - BU2508AX

NPN transistor, 8A, 700V - BU2508AX
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 3.73$ 3.73$
5 - 9 3.54$ 3.54$
10 - 11 3.36$ 3.36$
Quantity U.P
1 - 4 3.73$ 3.73$
5 - 9 3.54$ 3.54$
10 - 11 3.36$ 3.36$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 11
Set of 1

NPN transistor, 8A, 700V - BU2508AX. NPN transistor, 8A, 700V. Collector current: 8A. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Pd (Power Dissipation, Max): 45W. RoHS: yes. Type of transistor: NPN. Vcbo: 1500V. Quantity in stock updated on 20/04/2025, 05:25.

Equivalent products :

Quantity in stock : 98
MD1802FX

MD1802FX

NPN transistor, 10A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing ...
MD1802FX
NPN transistor, 10A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
MD1802FX
NPN transistor, 10A, ISOWATT218FX, 1500V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 1500V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 1pF. Semiconductor material: silicon. Function: High Voltage Transistor for Standard Definition CRT. Max hFE gain: 8.5. Minimum hFE gain: 5.5. Ic(pulse): 15A. Temperature: +150°C. Pd (Power Dissipation, Max): 57W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.5V. Vebo: 9V. Number of terminals: 3. Quantity per case: 1. BE diode: no. CE diode: no
Set of 1
2.92$ VAT incl.
(2.92$ excl. VAT)
2.92$
Quantity in stock : 44
KSD5703

KSD5703

NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (accord...
KSD5703
NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: 0.1...0.3us
KSD5703
NPN transistor, 10A, TO-3PF, 800V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 800V. Housing: TO-3PF (SOT399, 2-16E3A). Cost): 500pF. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: 'High Voltage Color Display Horizontal Deflection'. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Vebo: 6V. Spec info: 0.1...0.3us
Set of 1
3.55$ VAT incl.
(3.55$ excl. VAT)
3.55$
Quantity in stock : 774
FJAF6810A

FJAF6810A

NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (accord...
FJAF6810A
NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. BE diode: no. CE diode: no
FJAF6810A
NPN transistor, 10A, TO-3PF, 750V, TO-3PF (SOT399, 2-16E3A). Collector current: 10A. Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 750V. Housing: TO-3PF (SOT399, 2-16E3A). Semiconductor material: silicon. Max hFE gain: 10. Minimum hFE gain: 5. Ic(pulse): 20A. Marking on the case: J6810A. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf (type): 0.2us. Type of transistor: NPN. Vcbo: 1550V. Maximum saturation voltage VCE(sat): 3V. Vebo: 6V. Quantity per case: 1. Function: High-speed switching. BE diode: no. CE diode: no
Set of 1
1.40$ VAT incl.
(1.40$ excl. VAT)
1.40$

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LA7845

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