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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD679A

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD679A
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 0.72$ 0.72$
5 - 9 0.68$ 0.68$
10 - 13 0.66$ 0.66$
Quantity U.P
1 - 4 0.72$ 0.72$
5 - 9 0.68$ 0.68$
10 - 13 0.66$ 0.66$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 13
Set of 1

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V - BD679A. NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD680A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 2.8V. Original product from manufacturer Onsemi. Quantity in stock updated on 09/06/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 939
BD681

BD681

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 100V. Collector current: 4A. Housing: TO-126 (T...
BD681
NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 100V. Resistor B: yes. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. C(in): TO-126. Cost): SOT-32. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD682. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
BD681
NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 100V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 100V. Resistor B: yes. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. C(in): TO-126. Cost): SOT-32. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Max hFE gain: 750. Ic(pulse): 6A. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD682. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
Set of 1
0.56$ VAT incl.
(0.56$ excl. VAT)
0.56$

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