NPN transistor, 60V, 15A, TO-3 - 2N3055
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 4.96$ | 4.96$ |
| 5 - 9 | 4.71$ | 4.71$ |
| 10 - 24 | 4.56$ | 4.56$ |
| 25 - 49 | 4.47$ | 4.47$ |
| 50 - 99 | 4.37$ | 4.37$ |
| 100+ | 4.12$ | 4.12$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 4.96$ | 4.96$ |
| 5 - 9 | 4.71$ | 4.71$ |
| 10 - 24 | 4.56$ | 4.56$ |
| 25 - 49 | 4.47$ | 4.47$ |
| 50 - 99 | 4.37$ | 4.37$ |
| 100+ | 4.12$ | 4.12$ |
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NPN transistor, 60V, 15A, TO-3 - 2N3055. NPN transistor, 60V, 15A, TO-3. Collector-Emitter Voltage VCEO: 60V. Collector current: 15A. Housing: TO-3. Type of transistor: NPN power transistor. Polarity: NPN. Power: 115W. Quantity in stock updated on 23/05/2025, 21:25.
Equivalent products :
2N3055-ONS
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). H...
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Spec info: complementary transistor (pair) MJ2955. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Spec info: complementary transistor (pair) MJ2955. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V
2N3055-CDIL
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). H...
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Spec info: complementary transistor (pair) MJ2955. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V
NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 70V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 70V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Spec info: complementary transistor (pair) MJ2955. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 7V
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