NPN bipolar transistors

NPN transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Spec info: complementary transistor (pair) BD242C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V

NPN transistor, 3A, TO-220, TO-220, 100V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 5A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD242C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V

NPN transistor, PCB soldering, TO-220AB, 6A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 6A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) BD244C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V

NPN transistor, PCB soldering, TO-220AB, 6A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 6A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD243C. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 6A, TO-220, TO-220, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistor. Max hFE gain: 30. Minimum hFE gain: 15. Ic(pulse): 10A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 65W. RoHS: yes. Spec info: complementary transistor (pair) BD244C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V

NPN transistor, 6A, TO-220, TO-220AB, 100V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 65W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V

NPN transistor, 10A, TO-3PN ( 2-16C1B ), TO-3P, 115V. Collector current: 10A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) BD246C. Type of transistor: NPN

NPN transistor, 10A, 115V. Collector current: 10A. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) BD246C. Type of transistor: NPN

NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218AB, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218AB. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 25. Minimum hFE gain: 5. Ic(pulse): 40A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BD250C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.8V. Vebo: 5V

NPN transistor, 25A, TO-3P ( TO-218 SOT-93 ), TO-218, 115V. Collector current: 25A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-218. Collector/emitter voltage Vceo: 115V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BD250C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 6A, SOT-82, 100V. Collector current: 6A. Housing: SOT-82. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 22V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 22V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 45V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 130. Minimum hFE gain: 30. Ic(pulse): 7A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. RoHS: yes. Spec info: complementary transistor (pair) BD438. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN transistor, 4A, TO-126F, TO-126F, 45V. Collector current: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 36W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 4A, TO-126 (TO-225, SOT-32), SOT-32, 60V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): SOT-32. Collector/emitter voltage Vceo: 60V. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 130. Minimum hFE gain: 20. Ic(pulse): 7A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 36W. Spec info: complementary transistor (pair) BD440. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.8V

NPN transistor, 80V, 4A, TO-126. Collector-Emitter Voltage VCEO: 80V. Collector current: 4A. Housing: TO-126. Type of transistor: NPN power transistor. Polarity: NPN. Power: 36W. Max frequency: 3MHz

NPN transistor, PCB soldering, TO-225, 4A, TO-126F, TO-126F, 80V. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 80V. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD441G. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220AB, 8A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD649. Collector-emitter voltage Uceo [V]: 120V. Maximum dissipation Ptot [W]: 62.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, 45V. Collector current: 10A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 75W. Type of transistor: NPN

NPN transistor, PCB soldering, TO-126, 4A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD677. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-126, 4A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD677A. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-225, 4A. Housing: PCB soldering. Housing: TO-225. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-225. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD677AG. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-126, 4A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 4A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD679. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 4A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 4A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. BE diode: no. BE resistor: R1 typ=15k Ohms, R2 typ=100 Ohms. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Minimum hFE gain: 750. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD680A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 2.8V