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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V - SPP08N80C3

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V - SPP08N80C3
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 3.31$ 3.31$
5 - 9 3.14$ 3.14$
10 - 24 2.98$ 2.98$
25 - 49 2.81$ 2.81$
50 - 53 2.74$ 2.74$
Quantity U.P
1 - 4 3.31$ 3.31$
5 - 9 3.14$ 3.14$
10 - 24 2.98$ 2.98$
25 - 49 2.81$ 2.81$
50 - 53 2.74$ 2.74$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 53
Set of 1

N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V - SPP08N80C3. N-channel transistor, 5.1A, 8A, 100uA, 0.56 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 5.1A. ID (T=25°C): 8A. Idss (max): 100uA. On-resistance Rds On: 0.56 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 1100pF. Cost): 46pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated High peak current capability'. Id(imp): 24A. IDss (min): 20uA. Marking on the case: 08N60C3. Pd (Power Dissipation, Max): 104W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool Mos POWER trafnsistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 19/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 32
SPP11N80C3

SPP11N80C3

N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25...
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Function: ID pulse 33A. Quantity per case: 1
SPP11N80C3
N-channel transistor, 7.1A, 11A, 11A, 0.39 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 7.1A. ID (T=25°C): 11A. Idss (max): 11A. On-resistance Rds On: 0.39 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Channel type: N. Type of transistor: MOSFET. Id(imp): 33A. Pd (Power Dissipation, Max): 156W. Assembly/installation: PCB through-hole mounting. Technology: Cool Mos. Function: ID pulse 33A. Quantity per case: 1
Set of 1
5.64$ VAT incl.
(5.64$ excl. VAT)
5.64$
Quantity in stock : 76
FQP9N90C

FQP9N90C

N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°...
FQP9N90C
N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Type of transistor: MOSFET. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET. Quantity per case: 1. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF
FQP9N90C
N-channel transistor, 2.8A, 8A, 8A, 1.12 Ohms, TO-220, TO-220, 900V. ID (T=100°C): 2.8A. ID (T=25°C): 8A. Idss (max): 8A. On-resistance Rds On: 1.12 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 900V. Channel type: N. Type of transistor: MOSFET. Id(imp): 32A. Pd (Power Dissipation, Max): 205W. Assembly/installation: PCB through-hole mounting. Technology: DMOS, QFET. Quantity per case: 1. Function: Fast switch, Low gate charge 45nC, Low Crss 14pF
Set of 1
6.14$ VAT incl.
(6.14$ excl. VAT)
6.14$

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