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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V - SP0010-91630

N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V - SP0010-91630
Quantity excl. VAT VAT incl.
1 - 1 33.54$ 33.54$
2 - 2 31.86$ 31.86$
3 - 4 30.18$ 30.18$
5 - 9 28.51$ 28.51$
10 - 14 27.83$ 27.83$
15 - 19 27.16$ 27.16$
20 - 30 26.16$ 26.16$
Quantity U.P
1 - 1 33.54$ 33.54$
2 - 2 31.86$ 31.86$
3 - 4 30.18$ 30.18$
5 - 9 28.51$ 28.51$
10 - 14 27.83$ 27.83$
15 - 19 27.16$ 27.16$
20 - 30 26.16$ 26.16$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 30
Set of 1

N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V - SP0010-91630. N-channel transistor, 49A, 77.5A, 10uA, 0.041 Ohms, TO-247, TO-247, 650V. ID (T=100°C): 49A. ID (T=25°C): 77.5A. Idss (max): 10uA. On-resistance Rds On: 0.041 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 650V. C(in): 8180pF. Cost): 310pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 630 ns. Type of transistor: MOSFET. Function: 'Increased MOSFET dv/dt ruggedness'. Id(imp): 267A. IDss (min): 5uA. Marking on the case: 6R041P6. Number of terminals: 3. Pd (Power Dissipation, Max): 481W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 90 ns. Td(on): 29 ns. Technology: CoolMOS ™ P6 Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 19/04/2025, 15:25.

Equivalent products :

Quantity in stock : 42
SPP17N80C3

SPP17N80C3

N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25...
SPP17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
SPP17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.25 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.25 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
9.23$ VAT incl.
(9.23$ excl. VAT)
9.23$

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