Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 5.26$ | 5.26$ |
2 - 2 | 4.99$ | 4.99$ |
3 - 4 | 4.73$ | 4.73$ |
5 - 9 | 4.47$ | 4.47$ |
10 - 19 | 4.36$ | 4.36$ |
20 - 29 | 4.26$ | 4.26$ |
30 - 139 | 4.10$ | 4.10$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 5.26$ | 5.26$ |
2 - 2 | 4.99$ | 4.99$ |
3 - 4 | 4.73$ | 4.73$ |
5 - 9 | 4.47$ | 4.47$ |
10 - 19 | 4.36$ | 4.36$ |
20 - 29 | 4.26$ | 4.26$ |
30 - 139 | 4.10$ | 4.10$ |
N-channel transistor, TO-247, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V - IRFP460APBF. N-channel transistor, TO-247, 13A, 20A, 250uA, 0.27 Ohms, TO-247AC, 500V. Housing: TO-247. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 250uA. On-resistance Rds On: 0.27 Ohms. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 500V. RoHS: yes. C(in): 3100pF. Cost): 480pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 480 ns. Type of transistor: MOSFET. Function: Switching Mode Power Supplies (SMPS). Id(imp): 80A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET, High Efficiency Synchronous R. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 20/04/2025, 20:25.
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