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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 53A, 75A, 250uA, 0.011 Ohms, TO-220, TO-220AB, 100V - IRFB4710

N-channel transistor, 53A, 75A, 250uA, 0.011 Ohms, TO-220, TO-220AB, 100V - IRFB4710
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 4.91$ 4.91$
5 - 9 4.66$ 4.66$
10 - 24 4.42$ 4.42$
25 - 49 4.17$ 4.17$
50 - 58 4.07$ 4.07$
Quantity U.P
1 - 4 4.91$ 4.91$
5 - 9 4.66$ 4.66$
10 - 24 4.42$ 4.42$
25 - 49 4.17$ 4.17$
50 - 58 4.07$ 4.07$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 58
Set of 1

N-channel transistor, 53A, 75A, 250uA, 0.011 Ohms, TO-220, TO-220AB, 100V - IRFB4710. N-channel transistor, 53A, 75A, 250uA, 0.011 Ohms, TO-220, TO-220AB, 100V. ID (T=100°C): 53A. ID (T=25°C): 75A. Idss (max): 250uA. On-resistance Rds On: 0.011 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 6160pF. Cost): 440pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 74 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 300A. IDss (min): 1uA. Marking on the case: FB4710. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 41 ns. Td(on): 35 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 3.5V. G-S Protection: no. Quantity in stock updated on 20/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 5
STP80NF12

STP80NF12

N-channel transistor, 60A, 80A, 10uA, 0.013 Ohms, TO-220, TO-220, 120V. ID (T=100°C): 60A. ID (T=25...
STP80NF12
N-channel transistor, 60A, 80A, 10uA, 0.013 Ohms, TO-220, TO-220, 120V. ID (T=100°C): 60A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.013 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 120V. C(in): 4300pF. Cost): 600pF. Channel type: N. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 320A. IDss (min): 1uA. Marking on the case: P80NF12. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 40 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
STP80NF12
N-channel transistor, 60A, 80A, 10uA, 0.013 Ohms, TO-220, TO-220, 120V. ID (T=100°C): 60A. ID (T=25°C): 80A. Idss (max): 10uA. On-resistance Rds On: 0.013 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 120V. C(in): 4300pF. Cost): 600pF. Channel type: N. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 320A. IDss (min): 1uA. Marking on the case: P80NF12. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 40 ns. Technology: STripFET II POWER MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no
Set of 1
2.86$ VAT incl.
(2.86$ excl. VAT)
2.86$

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