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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 2.1A, 3.3A, 3.3A, 1.16 Ohms, TO-220, TO-220, 200V - IRF610B

N-channel transistor, 2.1A, 3.3A, 3.3A, 1.16 Ohms, TO-220, TO-220, 200V - IRF610B
Quantity excl. VAT VAT incl.
1 - 4 0.74$ 0.74$
5 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.63$ 0.63$
50 - 99 0.61$ 0.61$
100 - 249 0.60$ 0.60$
250+ 0.57$ 0.57$
Quantity U.P
1 - 4 0.74$ 0.74$
5 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.63$ 0.63$
50 - 99 0.61$ 0.61$
100 - 249 0.60$ 0.60$
250+ 0.57$ 0.57$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 2.1A, 3.3A, 3.3A, 1.16 Ohms, TO-220, TO-220, 200V - IRF610B. N-channel transistor, 2.1A, 3.3A, 3.3A, 1.16 Ohms, TO-220, TO-220, 200V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 3.3A. On-resistance Rds On: 1.16 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 200V. Channel type: N. Type of transistor: MOSFET. Function: VGS @10V. Pd (Power Dissipation, Max): 38W. Assembly/installation: PCB through-hole mounting. Quantity per case: 1. Quantity in stock updated on 20/04/2025, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 64
IRF610

IRF610

N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 2.1A. ID (...
IRF610
N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
IRF610
N-channel transistor, 2.1A, 3.3A, 250uA, 1.5 Ohms, TO-220, TO-220AB, 200V. ID (T=100°C): 2.1A. ID (T=25°C): 3.3A. Idss (max): 250uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 200V. C(in): 140pF. Cost): 53pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 10A. IDss (min): 25uA. Pd (Power Dissipation, Max): 36W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 14 ns. Td(on): 8.2 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no
Set of 1
0.89$ VAT incl.
(0.89$ excl. VAT)
0.89$

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