FQU20N06L

Quantity	excl. VAT	VAT incl.
1 - 4	1.01$	1.01$
5 - 9	0.96$	0.96$
10 - 24	0.91$	0.91$
25 - 35	0.86$	0.86$

Quantity	U.P
1 - 4	1.01$	1.01$
5 - 9	0.96$	0.96$
10 - 24	0.91$	0.91$
25 - 35	0.86$	0.86$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 35

Set of 1

FQU20N06L. C(in): 480pF. Cost): 175pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 54 ns. Type of transistor: MOSFET. Function: Logic-Level. Id(imp): 68.8A. ID (T=100°C): 10.9A. ID (T=25°C): 17.2A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.046 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 10 ns. Technology: QFET, Enhancement mode power MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Spec info: low Gate Charge (typ 9.5nC). G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.

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Delivery in 2-3 days, with postal tracking!