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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 60A, TO-247, TO-247AB, 600V - FGH60N60SFD

N-channel transistor, 60A, TO-247, TO-247AB, 600V - FGH60N60SFD
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 13.39$ 13.39$
2 - 2 12.72$ 12.72$
3 - 4 12.05$ 12.05$
5 - 9 11.38$ 11.38$
10 - 10 11.12$ 11.12$
Quantity U.P
1 - 1 13.39$ 13.39$
2 - 2 12.72$ 12.72$
3 - 4 12.05$ 12.05$
5 - 9 11.38$ 11.38$
10 - 10 11.12$ 11.12$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 10
Set of 1

N-channel transistor, 60A, TO-247, TO-247AB, 600V - FGH60N60SFD. N-channel transistor, 60A, TO-247, TO-247AB, 600V. Ic(T=100°C): 60A. Housing: TO-247. Housing (according to data sheet): TO-247AB. Collector/emitter voltage Vceo: 600V. C(in): 2820pF. Cost): 350pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 47 ns. Function: Induction Heating, UPS, SMPS, PFC. Collector current: 60.4k Ohms. Ic(pulse): 180A. Marking on the case: FGH60N60SFD. Pd (Power Dissipation, Max): 378W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 134 ns. Td(on): 22 ns. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.3V. Maximum saturation voltage VCE(sat): 2.9V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4 v. Gate/emitter voltage VGE(th)max.: 6.5V. Number of terminals: 3. Conditioning unit: 30. CE diode: yes. Germanium diode: no. Quantity in stock updated on 19/04/2025, 18:25.

Technical documentation

Equivalent products :

Quantity in stock : 38
FGA60N65SMD

FGA60N65SMD

N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ...
FGA60N65SMD
N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no
FGA60N65SMD
N-channel transistor, 60A, TO-3P ( TO-218 SOT-93 ), TO-3PN, 650V. Ic(T=100°C): 60A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 650V. C(in): 2915pF. Cost): 270pF. Channel type: N. Trr Diode (Min.): 47ms. Collector current: 60.4k Ohms. Ic(pulse): 180A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 104 ns. Td(on): 18 ns. Technology: 'Field Stop IGBT'. Operating temperature: -55...+175°C. Saturation voltage VCE(sat): 1.9V. Maximum saturation voltage VCE(sat): 2.5V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3.5V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. Function: Solar Inverter, UPS, Welding station, PFC, Telecom, ESS. CE diode: yes. Germanium diode: no
Set of 1
10.32$ VAT incl.
(10.32$ excl. VAT)
10.32$

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