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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220, TO-220, 600V - 2SK1117

N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220, TO-220, 600V - 2SK1117
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.94$ 2.94$
5 - 8 2.80$ 2.80$
Quantity U.P
1 - 4 2.94$ 2.94$
5 - 8 2.80$ 2.80$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 8
Set of 1

N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220, TO-220, 600V - 2SK1117. N-channel transistor, 6A, 300uA, 0.95 Ohms, TO-220, TO-220, 600V. ID (T=25°C): 6A. Idss (max): 300uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 600V. C(in): 1400pF. Cost): 250pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 24A. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Td(off): 8.5 ns. Td(on): 4 ns. Technology: V-MOS. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/04/2025, 11:25.

Technical documentation

Equivalent products :

Quantity in stock : 50
IRFBC40

IRFBC40

N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (...
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
IRFBC40
N-channel transistor, 3.9A, 6.2A, 500uA, 1.2 Ohms, TO-220, TO-220AB, 600V. ID (T=100°C): 3.9A. ID (T=25°C): 6.2A. Idss (max): 500uA. On-resistance Rds On: 1.2 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 600V. C(in): 1300pF. Cost): 160pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 25A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
2.01$ VAT incl.
(2.01$ excl. VAT)
2.01$

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