Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.53$ | 1.53$ |
5 - 9 | 1.45$ | 1.45$ |
10 - 24 | 1.38$ | 1.38$ |
25 - 49 | 1.30$ | 1.30$ |
50 - 99 | 1.27$ | 1.27$ |
100 - 106 | 1.12$ | 1.12$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.53$ | 1.53$ |
5 - 9 | 1.45$ | 1.45$ |
10 - 24 | 1.38$ | 1.38$ |
25 - 49 | 1.30$ | 1.30$ |
50 - 99 | 1.27$ | 1.27$ |
100 - 106 | 1.12$ | 1.12$ |
IRFBC30. C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 06:25.
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