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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V - 2N7000

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V - 2N7000
[TITLE]
[TITLE]
Quantity (Set of 5) excl. VAT VAT incl.
1 - 2 0.84$ 0.84$
3 - 4 0.80$ 0.80$
5 - 9 0.75$ 0.75$
10 - 19 0.74$ 0.74$
20 - 49 0.71$ 0.71$
50 - 99 0.69$ 0.69$
100 - 129 0.60$ 0.60$
Quantity (Set of 5) U.P
1 - 2 0.84$ 0.84$
3 - 4 0.80$ 0.80$
5 - 9 0.75$ 0.75$
10 - 19 0.74$ 0.74$
20 - 49 0.71$ 0.71$
50 - 99 0.69$ 0.69$
100 - 129 0.60$ 0.60$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 641
Set of 5

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V - 2N7000. N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, O-92Ammo-Pack, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): O-92Ammo-Pack. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V. Original product from manufacturer Diotec Semiconductor. Quantity in stock updated on 31/05/2025, 23:25.

Technical documentation

Equivalent products :

Quantity in stock : 87
2N7000-ONS

2N7000-ONS

N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V. ID (T=25°C): 0.2A. Idss (max): 1000u...
2N7000-ONS
N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V
2N7000-ONS
N-channel transistor, 0.2A, 1000uA, 5 Ohms, TO-92, TO-92, 60V. ID (T=25°C): 0.2A. Idss (max): 1000uA. On-resistance Rds On: 5 Ohms. Housing: TO-92. Housing (according to data sheet): TO-92. Voltage Vds(max): 60V. C(in): 60pF. Cost): 25pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 0.5A. IDss (min): 1uA. Marking on the case: 2n7000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.35W. Weight: 0.18g. Assembly/installation: PCB through-hole mounting. Td(off): 10 ns. Td(on): 10 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 0.8V
Set of 1
0.39$ VAT incl.
(0.39$ excl. VAT)
0.39$

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