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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V - IRFPC60

N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V - IRFPC60
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 6.53$ 6.53$
2 - 2 6.20$ 6.20$
3 - 4 5.88$ 5.88$
5 - 9 5.55$ 5.55$
10 - 19 5.42$ 5.42$
20 - 22 5.29$ 5.29$
Quantity U.P
1 - 1 6.53$ 6.53$
2 - 2 6.20$ 6.20$
3 - 4 5.88$ 5.88$
5 - 9 5.55$ 5.55$
10 - 19 5.42$ 5.42$
20 - 22 5.29$ 5.29$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 22
Set of 1

N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V - IRFPC60. N-channel transistor, 6A, 16A, 500uA, 0.4 Ohms, TO-247, TO-247AC, 600V. ID (T=100°C): 6A. ID (T=25°C): 16A. Idss (max): 500uA. On-resistance Rds On: 0.4 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 600V. C(in): 3900pF. Cost): 440pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 610 ns. Type of transistor: MOSFET. Function: Fast Switching, Dynamic dv/dt Rating. Id(imp): 64A. IDss (min): 100uA. Pd (Power Dissipation, Max): 280W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 110 ns. Td(on): 19 ns. Technology: Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 13/04/2025, 21:25.

Technical documentation

Equivalent products :

Quantity in stock : 51
SPW17N80C3

SPW17N80C3

N-channel transistor, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 11A. ID (T=25...
SPW17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.29 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
SPW17N80C3
N-channel transistor, 11A, 17A, 250uA, 0.29 Ohms, TO-247, TO-247, 800V. ID (T=100°C): 11A. ID (T=25°C): 17A. Idss (max): 250uA. On-resistance Rds On: 0.29 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247. Voltage Vds(max): 800V. C(in): 2320pF. Cost): 1250pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: 'Extreme dv/dt rated Ultra low gate charge'. Id(imp): 51A. IDss (min): 0.5uA. Marking on the case: 17N80C3. Pd (Power Dissipation, Max): 208W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 77 ns. Td(on): 45 ns. Technology: Cool Mos POWER transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
8.33$ VAT incl.
(8.33$ excl. VAT)
8.33$

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