Electronic components and equipment, for businesses and individuals

IRFBC30A

IRFBC30A
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.86$ 1.86$
5 - 9 1.77$ 1.77$
10 - 24 1.68$ 1.68$
25 - 47 1.58$ 1.58$
Quantity U.P
1 - 4 1.86$ 1.86$
5 - 9 1.77$ 1.77$
10 - 24 1.68$ 1.68$
25 - 47 1.58$ 1.58$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 47
Set of 1

IRFBC30A. C(in): 510pF. Cost): 70pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 400 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 74W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 19 ns. Td(on): 9.8 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 13/01/2025, 02:25.

Equivalent products :

Quantity in stock : 106
IRFBC30

IRFBC30

C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quant...
IRFBC30
C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFBC30
C(in): 660pF. Cost): 86pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 370 ns. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. Id(imp): 14A. ID (T=100°C): 2.3A. ID (T=25°C): 3.6A. Idss (max): 500uA. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 75W. On-resistance Rds On: 2.2 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
1.53$ VAT incl.
(1.53$ excl. VAT)
1.53$

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