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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V - FQPF12N60C

N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V - FQPF12N60C
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Quantity excl. VAT VAT incl.
1 - 4 4.46$ 4.46$
5 - 9 4.23$ 4.23$
10 - 24 4.10$ 4.10$
25 - 49 4.01$ 4.01$
50 - 99 3.92$ 3.92$
100+ 3.70$ 3.70$
Quantity U.P
1 - 4 4.46$ 4.46$
5 - 9 4.23$ 4.23$
10 - 24 4.10$ 4.10$
25 - 49 4.01$ 4.01$
50 - 99 3.92$ 3.92$
100+ 3.70$ 3.70$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V - FQPF12N60C. N-channel transistor, 7.4A, 12A, 10uA, 0.53 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 7.4A. ID (T=25°C): 12A. Idss (max): 10uA. On-resistance Rds On: 0.53 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1760pF. Cost): 182pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 48A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 51W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 140 ns. Td(on): 30 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Fairchild. Quantity in stock updated on 17/06/2025, 20:25.

Technical documentation

Equivalent products :

Quantity in stock : 62
STF18NM60N

STF18NM60N

N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID ...
STF18NM60N
N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 18NM60. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STF18NM60N
N-channel transistor, 8.2A, 13A, 10uA, 0.26 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 13A. Idss (max): 10uA. On-resistance Rds On: 0.26 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 1000pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 18NM60. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 12 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
3.82$ VAT incl.
(3.82$ excl. VAT)
3.82$
Quantity in stock : 122
STF13NM60N

STF13NM60N

N-channel transistor, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID...
STF13NM60N
N-channel transistor, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
STF13NM60N
N-channel transistor, 8.2A, 11A, 100uA, 0.28 Ohms, TO-220FP, TO-220FP, 600V. ID (T=100°C): 8.2A. ID (T=25°C): 11A. Idss (max): 100uA. On-resistance Rds On: 0.28 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. C(in): 790pF. Cost): 60pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Id(imp): 52A. IDss (min): 1uA. Marking on the case: 13NM60N. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 3 ns. Technology: MDmesh™ II Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V
Set of 1
2.74$ VAT incl.
(2.74$ excl. VAT)
2.74$

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