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N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V - FQA9N90C-F109

N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V - FQA9N90C-F109
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Quantity excl. VAT VAT incl.
1 - 1 9.39$ 9.39$
2 - 2 8.92$ 8.92$
3 - 4 8.73$ 8.73$
5 - 9 8.45$ 8.45$
10 - 19 8.26$ 8.26$
Quantity U.P
1 - 1 9.39$ 9.39$
2 - 2 8.92$ 8.92$
3 - 4 8.73$ 8.73$
5 - 9 8.45$ 8.45$
10 - 19 8.26$ 8.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 19
Set of 1

N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V - FQA9N90C-F109. N-channel transistor, 5.7A, 9A, 100uA, 1.12 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 900V. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 100uA. On-resistance Rds On: 1.12 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 900V. C(in): 2100pF. Cost): 175pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 36A. IDss (min): 10uA. Marking on the case: FQA9N90C. Number of terminals: 3. Pd (Power Dissipation, Max): 280W. RoHS: yes. Weight: 4.7g. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Original product from manufacturer Fairchild. Quantity in stock updated on 25/07/2025, 15:25.

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Quantity in stock : 32
FQA13N80-F109

FQA13N80-F109

N-channel transistor, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): ...
FQA13N80-F109
N-channel transistor, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 8A. ID (T=25°C): 12.6A. Idss (max): 100uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2700pF. Cost): 275pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 850 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 50.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
FQA13N80-F109
N-channel transistor, 8A, 12.6A, 100uA, 0.58 Ohms, TO-3PN ( 2-16C1B ), TO-3PN, 800V. ID (T=100°C): 8A. ID (T=25°C): 12.6A. Idss (max): 100uA. On-resistance Rds On: 0.58 Ohms. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Voltage Vds(max): 800V. C(in): 2700pF. Cost): 275pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 850 ns. Type of transistor: MOSFET. Function: Fast switching, Low gate charge (typical 44nC). G-S Protection: no. Id(imp): 50.4A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V
Set of 1
9.58$ VAT incl.
(9.58$ excl. VAT)
9.58$

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