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Semiconductors Transistors

FQA9N90C-F109

FQA9N90C-F109
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 1 9.39$ 9.39$
2 - 2 8.92$ 8.92$
3 - 4 8.45$ 8.45$
5 - 9 7.98$ 7.98$
10 - 19 7.79$ 7.79$
20 - 26 7.60$ 7.60$
Quantity U.P
1 - 1 9.39$ 9.39$
2 - 2 8.92$ 8.92$
3 - 4 8.45$ 8.45$
5 - 9 7.98$ 7.98$
10 - 19 7.79$ 7.79$
20 - 26 7.60$ 7.60$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 26
Set of 1

FQA9N90C-F109. C(in): 2100pF. Cost): 175pF. Channel type: N. Trr Diode (Min.): 550 ns. Type of transistor: MOSFET. Id(imp): 36A. ID (T=100°C): 5.7A. ID (T=25°C): 9A. Idss (max): 100uA. IDss (min): 10uA. Marking on the case: FQA9N90C. Pd (Power Dissipation, Max): 280W. On-resistance Rds On: 1.12 Ohms. RoHS: yes. Weight: 4.7g. Assembly/installation: PCB through-hole mounting. Td(off): 100 ns. Td(on): 50 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 44nC). Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 10/01/2025, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 71
FQA13N80-F109

FQA13N80-F109

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3PN. Configuration: ...
FQA13N80-F109
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1
FQA13N80-F109
RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FQA13N80. Drain-source voltage Uds [V]: 800V. Drain Current Id [A] @ 25°C: 12.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.75 Ohms @ 6.3A. Gate breakdown voltage Ugs [V]: 5V. Switch-on time ton [nsec.]: 130 ns. Switch-off delay tf[nsec.]: 320 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 300W. Assembly/installation: PCB through-hole mounting. Td(off): 155 ns. Td(on): 60 ns. Technology: DMOS, QFET. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Housing (JEDEC standard): 1
Set of 1
9.58$ VAT incl.
(9.58$ excl. VAT)
9.58$

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