FQA24N60

FQA24N60. C(in): 4200pF. Cost): 550pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 470 ns. Type of transistor: MOSFET. Id(imp): 94A. ID (T=100°C): 14.9A. ID (T=25°C): 23.5A. Idss (max): 100uA. IDss (min): 10uA. Pd (Power Dissipation, Max): 310W. On-resistance Rds On: 0.18 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 200 ns. Td(on): 90 ns. Technology: DMOS Technology. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: Fast switching, Low gate charge (typical 90nC). G-S Protection: no. Quantity in stock updated on 11/01/2025, 22:25.