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Semiconductors Transistors

NDF10N60ZG

NDF10N60ZG
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.38$ 2.38$
5 - 9 2.26$ 2.26$
10 - 24 2.14$ 2.14$
25 - 49 2.02$ 2.02$
50 - 99 1.97$ 1.97$
100 - 249 1.92$ 1.92$
250+ 1.83$ 1.83$
Quantity U.P
1 - 4 2.38$ 2.38$
5 - 9 2.26$ 2.26$
10 - 24 2.14$ 2.14$
25 - 49 2.02$ 2.02$
50 - 99 1.97$ 1.97$
100 - 249 1.92$ 1.92$
250+ 1.83$ 1.83$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NDF10N60ZG. C(in): 1373pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 395 ns. Type of transistor: MOSFET. Function: Switching Regulator. Id(imp): 40A. ID (T=100°C): 6A. ID (T=25°C): 10A. Idss (max): 50uA. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.65 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 40 ns. Td(on): 15 ns. Technology: Field Effect Transistor. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 11/01/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 66
STP10NK60ZFP

STP10NK60ZFP

C(in): 1370pF. Cost): 156pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type o...
STP10NK60ZFP
C(in): 1370pF. Cost): 156pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 36A. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK60ZFP. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.65 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: SuperMESH Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: yes
STP10NK60ZFP
C(in): 1370pF. Cost): 156pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 570 ns. Type of transistor: MOSFET. Function: Zener-Protected. Id(imp): 36A. ID (T=100°C): 5.7A. ID (T=25°C): 10A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P10NK60ZFP. Pd (Power Dissipation, Max): 35W. On-resistance Rds On: 0.65 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 20 ns. Technology: SuperMESH Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Drain-source protection : yes. G-S Protection: yes
Set of 1
2.21$ VAT incl.
(2.21$ excl. VAT)
2.21$
Quantity in stock : 8
STF3NK80Z

STF3NK80Z

C(in): 485pF. Cost): 57pF. Channel type: N. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Fu...
STF3NK80Z
C(in): 485pF. Cost): 57pF. Channel type: N. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: F3NK80Z. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 3.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
STF3NK80Z
C(in): 485pF. Cost): 57pF. Channel type: N. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: switching circuits. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: F3NK80Z. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 3.8 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: Zener-protected SuperMESH™ Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: yes
Set of 1
1.37$ VAT incl.
(1.37$ excl. VAT)
1.37$

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2N3904

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FUSE-1-250A20T

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1N5365B

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