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Semiconductors Transistors

BC817-40

BC817-40
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.34$ 0.34$
5 - 9 0.32$ 0.32$
10 - 24 0.31$ 0.31$
25 - 49 0.29$ 0.29$
50 - 99 0.27$ 0.27$
100 - 149 0.26$ 0.26$
150 - 53415 0.24$ 0.24$
Quantity (Set of 10) U.P
1 - 4 0.34$ 0.34$
5 - 9 0.32$ 0.32$
10 - 24 0.31$ 0.31$
25 - 49 0.29$ 0.29$
50 - 99 0.27$ 0.27$
100 - 149 0.26$ 0.26$
150 - 53415 0.24$ 0.24$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 534145
Set of 10

BC817-40. Cost): 10pF. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: NF-TR. Max hFE gain: 630. Minimum hFE gain: 250. Collector current: 0.5A. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: screen printing/SMD code 6C. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 04:25.

Technical documentation

Equivalent products :

Quantity in stock : 2313
BC817-40-NXP

BC817-40-NXP

Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max...
BC817-40-NXP
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 600. Minimum hFE gain: 250. Collector current: 0.5A. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: SMD 6C. BE diode: no. CE diode: no
BC817-40-NXP
Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 600. Minimum hFE gain: 250. Collector current: 0.5A. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: SMD 6C. BE diode: no. CE diode: no
Set of 10
0.67$ VAT incl.
(0.67$ excl. VAT)
0.67$

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Quantity in stock : 534145
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TNY266GN

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LNK304GN

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CC0603KRX7R7BB104

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BAT54

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Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semicon...
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PPE-TIN2-E008G

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KNP5WS-47R0

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