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Semiconductors Transistors NPN bipolar transistors

NPN transistor, SOT23, 45V - BC817-40

NPN transistor, SOT23, 45V - BC817-40
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.30$ 0.30$
10 - 24 0.0960$ 0.0960$
25 - 49 0.0930$ 0.0930$
50 - 99 0.0569$ 0.0569$
100 - 249 0.0417$ 0.0417$
250 - 499 0.0334$ 0.0334$
500 - 500 0.0322$ 0.0322$
Quantity U.P
1 - 9 0.30$ 0.30$
10 - 24 0.0960$ 0.0960$
25 - 49 0.0930$ 0.0930$
50 - 99 0.0569$ 0.0569$
100 - 249 0.0417$ 0.0417$
250 - 499 0.0334$ 0.0334$
500 - 500 0.0322$ 0.0322$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 500
Set of 1

NPN transistor, SOT23, 45V - BC817-40. NPN transistor, SOT23, 45V. Housing: SOT23. Collector-Emitter Voltage VCEO: 45V. Type: transistor for low power applications. Polarity: NPN. Power: 0.31W. Collector-Base Voltage VCBO: 50V. Mounting Type: SMD. Bandwidth MHz: 100MHz. DC Collector/Base Gain hFE min.: 250. Current Max 1: 0.8A. Series: BC. Original product from manufacturer Yangjie Electronic Technology. Quantity in stock updated on 01/08/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 1973
BC817-40-NXP

BC817-40-NXP

NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23-3, 45V. Collector current: 0.5A. Housing: SOT-23 ( T...
BC817-40-NXP
NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23-3, 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 600. Minimum hFE gain: 250. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: SMD 6C. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
BC817-40-NXP
NPN transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23-3, 45V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 600. Minimum hFE gain: 250. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: SMD 6C. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V
Set of 10
0.67$ VAT incl.
(0.67$ excl. VAT)
0.67$

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