Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.70$ | 0.70$ |
5 - 9 | 0.67$ | 0.67$ |
10 - 15 | 0.63$ | 0.63$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.70$ | 0.70$ |
5 - 9 | 0.67$ | 0.67$ |
10 - 15 | 0.63$ | 0.63$ |
BC558B. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.08V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Function: Switching, and AF Amplifier. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 17:25.
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