Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.49$ | 0.49$ |
5 - 9 | 0.46$ | 0.46$ |
10 - 24 | 0.44$ | 0.44$ |
25 - 49 | 0.37$ | 0.37$ |
50 - 99 | 0.34$ | 0.34$ |
100 - 149 | 0.32$ | 0.32$ |
150 - 431 | 0.30$ | 0.30$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.49$ | 0.49$ |
5 - 9 | 0.46$ | 0.46$ |
10 - 24 | 0.44$ | 0.44$ |
25 - 49 | 0.37$ | 0.37$ |
50 - 99 | 0.34$ | 0.34$ |
100 - 149 | 0.32$ | 0.32$ |
150 - 431 | 0.30$ | 0.30$ |
BAS16. Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed switching diode. Forward current (AV): 215mA. IFSM: 1A. MRI (max): 0.5uA. MRI (min): 30nA. Marking on the case: A6W. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV. VRRM: 100V. Spec info: IFSM--1A (T=1ms), 4A (T=1us). Quantity in stock updated on 04/04/2025, 22:25.
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