Quantity | excl. VAT | VAT incl. |
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1 - 4 | 5.47$ | 5.47$ |
5 - 7 | 5.19$ | 5.19$ |
Quantity | U.P | |
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1 - 4 | 5.47$ | 5.47$ |
5 - 7 | 5.19$ | 5.19$ |
2SC5696. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Function: High-Speed. Max hFE gain: 11. Minimum hFE gain: 3. Collector current: 12A. Ic(pulse): 36A. Marking on the case: C5696. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 85W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Housing (according to data sheet): TO-3PMLH. Type of transistor: NPN. Vcbo: 1600V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 800V. Vebo: 5V. Housing: TO-3PF (SOT399, 2-16E3A). BE resistor: yes. CE diode: yes. Quantity in stock updated on 27/12/2024, 06:25.
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