Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.31$ | 4.31$ |
5 - 9 | 4.10$ | 4.10$ |
10 - 24 | 3.88$ | 3.88$ |
25 - 41 | 3.67$ | 3.67$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.31$ | 4.31$ |
5 - 9 | 4.10$ | 4.10$ |
10 - 24 | 3.88$ | 3.88$ |
25 - 41 | 3.67$ | 3.67$ |
2SB1342. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Max hFE gain: 10000. Minimum hFE gain: 1000. Collector current: 4A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Spec info: complementary transistor (pair) 2SD1933. Quantity in stock updated on 25/12/2024, 06:25.
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