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2SB1342

2SB1342
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 4.31$ 4.31$
5 - 9 4.10$ 4.10$
10 - 24 3.88$ 3.88$
25 - 41 3.67$ 3.67$
Quantity U.P
1 - 4 4.31$ 4.31$
5 - 9 4.10$ 4.10$
10 - 24 3.88$ 3.88$
25 - 41 3.67$ 3.67$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 41
Set of 1

2SB1342. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Max hFE gain: 10000. Minimum hFE gain: 1000. Collector current: 4A. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Spec info: complementary transistor (pair) 2SD1933. Quantity in stock updated on 25/12/2024, 06:25.

Equivalent products :

Quantity in stock : 13
2SB1340

2SB1340

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Func...
2SB1340
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: insulated package transistor. Collector current: 6A. Note: =10000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V
2SB1340
Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 12 MHz. Function: insulated package transistor. Collector current: 6A. Note: =10000. Pd (Power Dissipation, Max): 30W. Type of transistor: PNP. Collector/emitter voltage Vceo: 120V
Set of 1
1.37$ VAT incl.
(1.37$ excl. VAT)
1.37$

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