2SA1213Y

Quantity	excl. VAT	VAT incl.
1 - 9	0.68$	0.68$
10 - 24	0.65$	0.65$
25 - 49	0.61$	0.61$
50 - 71	0.58$	0.58$

Quantity	U.P
1 - 9	0.68$	0.68$
10 - 24	0.65$	0.65$
25 - 49	0.61$	0.61$
50 - 71	0.58$	0.58$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 71

Set of 1

2SA1213Y. Cost): 40pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 2A. Marking on the case: NY. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Housing: SOT-89. Housing (according to data sheet): 2-5K1A. Type of transistor: PNP. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: screen printing / SMD code NY. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!