Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.49$ | 0.49$ |
2 - 2 | 0.46$ | 0.46$ |
3 - 4 | 0.44$ | 0.44$ |
5 - 9 | 0.41$ | 0.41$ |
10 - 24 | 0.39$ | 0.39$ |
25 - 49 | 0.36$ | 0.36$ |
50 - 443 | 0.34$ | 0.34$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.49$ | 0.49$ |
2 - 2 | 0.46$ | 0.46$ |
3 - 4 | 0.44$ | 0.44$ |
5 - 9 | 0.41$ | 0.41$ |
10 - 24 | 0.39$ | 0.39$ |
25 - 49 | 0.36$ | 0.36$ |
50 - 443 | 0.34$ | 0.34$ |
2N6520. Housing: TO-92. Resistor B: Power Transistor. BE resistor: -350V. C(in): 100pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 200. Minimum hFE gain: 15. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 350V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6517. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 00:25.
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