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NPN-Transistor, TO-92, 0.5A, TO-92, 350V - 2N6520

NPN-Transistor, TO-92, 0.5A, TO-92, 350V - 2N6520
[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 0.49$ 0.49$
2 - 2 0.46$ 0.46$
3 - 4 0.44$ 0.44$
5 - 9 0.41$ 0.41$
10 - 24 0.39$ 0.39$
25 - 49 0.36$ 0.36$
50 - 440 0.34$ 0.34$
Quantity (Set of 10) U.P
1 - 1 0.49$ 0.49$
2 - 2 0.46$ 0.46$
3 - 4 0.44$ 0.44$
5 - 9 0.41$ 0.41$
10 - 24 0.39$ 0.39$
25 - 49 0.36$ 0.36$
50 - 440 0.34$ 0.34$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 4396
Set of 10

NPN-Transistor, TO-92, 0.5A, TO-92, 350V - 2N6520. NPN-Transistor, TO-92, 0.5A, TO-92, 350V. Housing: TO-92. Collector current: 0.5A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. Resistor B: Power Transistor. BE resistor: -350V. C(in): 100pF. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 200. Minimum hFE gain: 15. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: complementary transistor (pair) 2N6517. BE diode: no. CE diode: no. Quantity in stock updated on 12/04/2025, 18:25.

Equivalent products :

Quantity in stock : 58
BF493S

BF493S

NPN-Transistor, 0.5A, TO-92, TO-92, 350V. Collector current: 0.5A. Housing: TO-92. Housing (accordin...
BF493S
NPN-Transistor, 0.5A, TO-92, TO-92, 350V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. Cost): 1.6pF. Semiconductor material: silicon. FT: 50 MHz. Max hFE gain: 40. Minimum hFE gain: 25. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V. Maximum saturation voltage VCE(sat): 2V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no
BF493S
NPN-Transistor, 0.5A, TO-92, TO-92, 350V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. Cost): 1.6pF. Semiconductor material: silicon. FT: 50 MHz. Max hFE gain: 40. Minimum hFE gain: 25. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V. Maximum saturation voltage VCE(sat): 2V. Vebo: 6V. Quantity per case: 1. BE diode: no. CE diode: no
Set of 10
1.57$ VAT incl.
(1.57$ excl. VAT)
1.57$

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