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Semiconductors Transistors

2N3055

2N3055
Quantity excl. VAT VAT incl.
1 - 4 3.23$ 3.23$
5 - 9 3.07$ 3.07$
10 - 24 2.91$ 2.91$
25 - 30 2.75$ 2.75$
Quantity U.P
1 - 4 3.23$ 3.23$
5 - 9 3.07$ 3.07$
10 - 24 2.91$ 2.91$
25 - 30 2.75$ 2.75$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 30
Set of 1

2N3055. Type of transistor: NPN power transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 60V. Collector current: 15A. Power: 115W. Housing: TO-3. Quantity in stock updated on 23/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 50
2N3055-ONS

2N3055-ONS

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear...
2N3055-ONS
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
2N3055-ONS
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
Set of 1
12.19$ VAT incl.
(12.19$ excl. VAT)
12.19$
Quantity in stock : 52
2N3055-PMC

2N3055-PMC

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE ga...
2N3055-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
2N3055-PMC
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
Set of 1
2.08$ VAT incl.
(2.08$ excl. VAT)
2.08$
Quantity in stock : 95
2N3055-CDIL

2N3055-CDIL

Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear...
2N3055-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
2N3055-CDIL
Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Function: Audio Amplifier Linear and Switching. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Number of terminals: 2. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Assembly/installation: PCB through-hole mounting. Technology: 'epitaxial-base planar technology'. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 70V. Vebo: 7V. Spec info: complementary transistor (pair) MJ2955. BE diode: no. CE diode: no
Set of 1
2.14$ VAT incl.
(2.14$ excl. VAT)
2.14$

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Quantity in stock : 51
2N1711

2N1711

Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70MHz. Collector current: 50...
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AM-20-515-K

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BPS-1500

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Max Continuous current: 260mA. Voltage: 6...16V. Frequency range: 2...4kHz. Sound pressure: 105dB ...
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1001-001513

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1N4148

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CAR-BOX40-031-6

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G2R-2-48DC

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Coil Voltage: 48VDC. Contact material: AgCdO2. Switch mode: 2x ON-ON. Number of terminals: 8. Dimens...
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209-32681

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BPT-24BX

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Max Continuous current: 8mA. Diameter: 23.8mm. Voltage: 12VDC. Frequency: 2.7kHz. Sound pressure: ...
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3.02$

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