Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.73$ | 0.73$ |
5 - 6 | 0.70$ | 0.70$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.73$ | 0.73$ |
5 - 6 | 0.70$ | 0.70$ |
1N5396. Forward current (AV): 1.5A. IFSM: 50A. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). VRRM: 500V. Cj: 20pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: high Current Capability, Low Forward Voltage Drop. MRI (max): 50uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Spec info: IFSM--50Ap, t=8.3mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. Original product from manufacturer Diodes Inc.. Quantity in stock updated on 20/05/2025, 18:25.
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