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Semiconductors Diodes Standard and Rectifier Diodes

1N5394

1N5394
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.70$ 0.70$
5 - 9 0.67$ 0.67$
10 - 11 0.63$ 0.63$
Quantity (Set of 10) U.P
1 - 4 0.70$ 0.70$
5 - 9 0.67$ 0.67$
10 - 11 0.63$ 0.63$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 104
Set of 10

1N5394. Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 300V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap. Quantity in stock updated on 24/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 995
1N5399

1N5399

Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV)...
1N5399
Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
1N5399
Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 1000V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
Set of 10
0.62$ VAT incl.
(0.62$ excl. VAT)
0.62$
Quantity in stock : 65
1N5396

1N5396

Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV)...
1N5396
Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 500V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
1N5396
Cj: 20pF. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 1.5A. IFSM: 50A. MRI (max): 50uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): DO-15 ( 3.3x6.4mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1.1V. VRRM: 500V. Number of terminals: 2. Quantity per case: 1. Function: high Current Capability, Low Forward Voltage Drop. Spec info: IFSM--50Ap, t=8.3mS
Set of 10
0.73$ VAT incl.
(0.73$ excl. VAT)
0.73$

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SK104-25STS

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1N5408

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