STW5NK100Z

STW5NK100Z. C(in): 1154pF. Cost): 106pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 605 ns. Type of transistor: MOSFET. Function: protected with zener diode. Id(imp): 14A. ID (T=100°C): 2.2A. ID (T=25°C): 3.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W5NK100Z. Pd (Power Dissipation, Max): 125W. On-resistance Rds On: 2.7 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 51.5 ns. Td(on): 22.5 ns. Technology: SuperMESH3™ Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 1000V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 02:25.