STW12NK90Z

STW12NK90Z. C(in): 3500pF. Cost): 280pF. Channel type: N. Trr Diode (Min.): 964ns. Type of transistor: MOSFET. Function: Improved ESD capability. Id(imp): 44A. ID (T=100°C): 7A. ID (T=25°C): 11A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W12NK90Z. Pd (Power Dissipation, Max): 230W. On-resistance Rds On: 0.72 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 88 ns. Td(on): 31 ns. Technology: SuperMESH™ power MOSFET transistor protected by zener diode. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 900V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 02:25.