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Electronic components and equipment, for businesses and individuals

STP3NK80Z

STP3NK80Z
Quantity excl. VAT VAT incl.
1 - 4 1.07$ 1.07$
5 - 9 1.02$ 1.02$
10 - 24 0.97$ 0.97$
25 - 49 0.91$ 0.91$
50 - 82 0.89$ 0.89$
Quantity U.P
1 - 4 1.07$ 1.07$
5 - 9 1.02$ 1.02$
10 - 24 0.97$ 0.97$
25 - 49 0.91$ 0.91$
50 - 82 0.89$ 0.89$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 82
Set of 1

STP3NK80Z. C(in): 485pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: very high dv/dt ratio, for switching applications. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P3NK80Z. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 3.8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 14:25.

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