N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220, TO-220, 800V - STP3NK80Z
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 1.07$ | 1.07$ |
| 5 - 9 | 1.02$ | 1.02$ |
| 10 - 24 | 0.97$ | 0.97$ |
| 25 - 49 | 0.91$ | 0.91$ |
| 50 - 81 | 0.89$ | 0.89$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 1.07$ | 1.07$ |
| 5 - 9 | 1.02$ | 1.02$ |
| 10 - 24 | 0.97$ | 0.97$ |
| 25 - 49 | 0.91$ | 0.91$ |
| 50 - 81 | 0.89$ | 0.89$ |
N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220, TO-220, 800V - STP3NK80Z. N-channel transistor, 1.57A, 2.5A, 50uA, 3.8 Ohms, TO-220, TO-220, 800V. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. On-resistance Rds On: 3.8 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. C(in): 485pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: very high dv/dt ratio, for switching applications. Id(imp): 10A. IDss (min): 1uA. Marking on the case: P3NK80Z. Pd (Power Dissipation, Max): 70W. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 19/04/2025, 14:25.
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