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STP3NB80

STP3NB80
Quantity excl. VAT VAT incl.
1 - 4 2.26$ 2.26$
5 - 9 2.15$ 2.15$
10 - 12 2.03$ 2.03$
Quantity U.P
1 - 4 2.26$ 2.26$
5 - 9 2.15$ 2.15$
10 - 12 2.03$ 2.03$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 12
Set of 1

STP3NB80. C(in): 440pF. Cost): 60pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 10.4A. ID (T=100°C): 1.6A. ID (T=25°C): 2.6A. Idss (max): 50uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 90W. On-resistance Rds On: 4.6 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 15 ns. Technology: PowerMESH™ MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.

Equivalent products :

Quantity in stock : 82
STP3NK80Z

STP3NK80Z

C(in): 485pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of ...
STP3NK80Z
C(in): 485pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: very high dv/dt ratio, for switching applications. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P3NK80Z. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 3.8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: yes
STP3NK80Z
C(in): 485pF. Cost): 57pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 384 ns. Type of transistor: MOSFET. Function: very high dv/dt ratio, for switching applications. Id(imp): 10A. ID (T=100°C): 1.57A. ID (T=25°C): 2.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: P3NK80Z. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 3.8 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 36ns. Td(on): 17 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Drain-source protection : yes. G-S Protection: yes
Set of 1
1.07$ VAT incl.
(1.07$ excl. VAT)
1.07$

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