Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.04$ | 4.04$ |
5 - 9 | 3.84$ | 3.84$ |
10 - 24 | 3.63$ | 3.63$ |
25 - 49 | 3.43$ | 3.43$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.04$ | 4.04$ |
5 - 9 | 3.84$ | 3.84$ |
10 - 24 | 3.63$ | 3.63$ |
25 - 49 | 3.43$ | 3.43$ |
STP12NM50. C(in): 1000pF. Cost): 250pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 270 ns. Type of transistor: MOSFET. Id(imp): 48A. ID (T=100°C): 7.5A. ID (T=25°C): 12A. Idss (max): 10uA. IDss (min): 1uA. Marking on the case: P12NM50. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.3 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(on): 20 ns. Technology: MDmesh Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -65...+150°C. Voltage Vds(max): 550V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: HIGH dv/dt, Low Gate Capacitance. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.
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