SPP06N80C3

SPP06N80C3. C(in): 785pF. Cost): 33pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 520 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 18A. ID (T=100°C): 3.8A. ID (T=25°C): 6A. Idss (max): 50uA. IDss (min): 10uA. Marking on the case: 06N80C3. Pd (Power Dissipation, Max): 83W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 72 ns. Td(on): 25 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 25/12/2024, 19:25.