SPP04N60C3XKSA1

Quantity	excl. VAT	VAT incl.
1 - 4	2.87$	2.87$
5 - 9	2.73$	2.73$
10 - 24	2.59$	2.59$
25 - 49	2.44$	2.44$
50 - 99	2.39$	2.39$
100 - 133	2.33$	2.33$

Quantity	U.P
1 - 4	2.87$	2.87$
5 - 9	2.73$	2.73$
10 - 24	2.59$	2.59$
25 - 49	2.44$	2.44$
50 - 99	2.39$	2.39$
100 - 133	2.33$	2.33$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 133

Set of 1

SPP04N60C3XKSA1. C(in): 490pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: Ultra low gate charge Extreme dv/dt rated. Id(imp): 13.5A. ID (T=100°C): 2.8A. ID (T=25°C): 4.5A. Idss (max): 50uA. IDss (min): 0.5uA. Marking on the case: 04N80C3. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.78 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 58.5 ns. Td(on): 6 ns. Technology: Cool MOS™ Power Transistor. Housing: TO-220. Housing (according to data sheet): TO-220-3-1. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.9V. Vgs(th) min.: 2.1V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 26/12/2024, 12:25.

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Delivery in 2-3 days, with postal tracking!