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Semiconductors Diodes Standard and Rectifier Diodes

RGP10D

RGP10D
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.20$ 0.20$
50 - 99 0.19$ 0.19$
100 - 198 0.18$ 0.18$
Quantity U.P
1 - 9 0.22$ 0.22$
10 - 24 0.21$ 0.21$
25 - 49 0.20$ 0.20$
50 - 99 0.19$ 0.19$
100 - 198 0.18$ 0.18$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 198
Set of 1

RGP10D. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 200V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS. Quantity in stock updated on 26/12/2024, 03:25.

Technical documentation

Equivalent products :

Quantity in stock : 737
RGP10J

RGP10J

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semic...
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$
Quantity in stock : 66
RGP10G

RGP10G

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
RGP10G
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: IFSM--30Ap t=8.3mS
RGP10G
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.70$ VAT incl.
(0.70$ excl. VAT)
0.70$

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CFR1-4W-1M

CFR1-4W-1M

Resistance: 1M Ohms. Power: 0.25W. Resistor type: carbon layer. Note: CFR1/4W E12. Note: 2.5x6.8mm. ...
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RGP15J

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LNK304GN

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RGP30M

RGP30M

Semiconductor material: silicon. Forward current (AV): 3A. Note: 125App/8.3ms. Number of terminals: ...
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BOX-M100-80-40

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SB5150

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CONN-P009-2-5

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BOX-KM19

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BOX-KM19
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