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RGP10G

RGP10G
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Quantity excl. VAT VAT incl.
1 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.63$ 0.63$
50 - 66 0.60$ 0.60$
Quantity U.P
1 - 9 0.70$ 0.70$
10 - 24 0.67$ 0.67$
25 - 49 0.63$ 0.63$
50 - 66 0.60$ 0.60$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 66
Set of 1

RGP10G. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Spec info: IFSM--30Ap t=8.3mS. Quantity in stock updated on 26/12/2024, 02:25.

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Quantity in stock : 43529
UF4007

UF4007

Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole m...
UF4007
Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A
UF4007
Semiconductor material: silicon. Forward current (AV): 1A. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41. VRRM: 1000V. Ifsm [A]: 33A. Close voltage (repetitive) Vrrm [V]: 1 kV. Leakage current on closing Ir [A]: 5uA..50uA. Switching speed (regeneration time) tr [sec.]: 75 ns. Number of terminals: 2. Note: GI-S. Operating temperature range min (°C): -50°C. Operating temperature range max (°C): +175°C. Forward voltage Vfmax (V): 1.7V @ 1A
Set of 10
0.48$ VAT incl.
(0.48$ excl. VAT)
0.48$
Quantity in stock : 737
RGP10J

RGP10J

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semic...
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
RGP10J
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 250 ns. Semiconductor material: silicon. Function: Fast Switching Rectifier diode. Forward current (AV): 1A. IFSM: 30A. MRI (max): 200uA. MRI (min): 5uA. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AL ( 2.7x5.2mm ). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 600V. Note: GI, S. Spec info: IFSM--30Ap t=8.3mS
Set of 1
0.29$ VAT incl.
(0.29$ excl. VAT)
0.29$

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