SPD08P06P

Quantity	excl. VAT	VAT incl.
1 - 4	1.43$	1.43$
5 - 9	1.36$	1.36$
10 - 24	1.29$	1.29$
25 - 49	1.22$	1.22$
50 - 92	1.19$	1.19$

Quantity	U.P
1 - 4	1.43$	1.43$
5 - 9	1.36$	1.36$
10 - 24	1.29$	1.29$
25 - 49	1.22$	1.22$
50 - 92	1.19$	1.19$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 92

Set of 1

SPD08P06P. C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60us. Type of transistor: MOSFET. Id(imp): 35A. ID (T=100°C): 6.2A. ID (T=25°C): 8.8A. Idss (max): 10uA. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Spec info: ID pulse 35.2A. G-S Protection: no. Quantity in stock updated on 26/12/2024, 07:25.

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Delivery in 2-3 days, with postal tracking!