P-channel transistor STD10P6F6, D-PAK ( TO-252 ), TO-252, -60V, 10A, 10uA, TO-252 ( DPAK ) ( SOT428 ), 60V. Housing: D-PAK ( TO-252 ). Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -60V. ID (T=25°C): 10A. Idss (max): 10uA. Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 340pF. Channel type: P. Ciss Gate Capacitance [pF]: 340pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Cost): 40pF. Drain current Id (A) @ 25°C: -10A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.16 Ohms @ -10A. Drain-source protection: yes. Function: switching circuits. G-S Protection: no. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs: 20V. ID (T=100°C): 7.2A. IDss (min): 1uA. Id(imp): 40A. Manufacturer's marking: 10P6F6. Marking on the case: 10P6F6. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 36W. Number of terminals: 2. Number of terminals: 3. On-resistance Rds On: 0.13 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 14 ns. Switch-on time ton [nsec.]: 64 ns. Td(off): 64 ns. Td(on): 14 ns. Technology: Low gate charge STRipFET™ II Power MOSFET. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 06:54