P-channel transistor FDD5614P, D-PAK ( TO-252 ), TO-252, -60V, 15A, 1uA, TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. Housing: D-PAK ( TO-252 ). Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -60V. ID (T=25°C): 15A. Idss (max): 1uA. Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 759pF. Channel type: P. Ciss Gate Capacitance [pF]: 759pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Cost): 90pF. Drain current Id (A) @ 25°C: -15A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.1 Ohms @ -4.5A. Drain-source protection: diode. Function: DC/DC voltage converter. G-S Protection: no. Gate breakdown voltage Ugs [V]: -3V. Gate/source voltage Vgs: 20V. ID (T=100°C): 15A. IDss (min): 1uA. Id(imp): 45A. Manufacturer's marking: FDD5614P. Marking on the case: FDD5614P. Max temperature: +175°C.. Maximum dissipation Ptot [W]: 42W. Note: Logic level gated transistor. Number of terminals: 2. Number of terminals: 3. On-resistance Rds On: 0.076 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 42W. Quantity per case: 1. RoHS: yes. Switch-off delay tf[nsec.]: 34 ns. Switch-on time ton [nsec.]: 14 ns. Td(off): 19 ns. Td(on): 7 ns. Technology: PowerTrench MOSFET. Type of transistor: MOSFET. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:19